| 类别(中文) | 参数(中文) | 详情(中文) | Category (English) | Parameter (English) | Details (English) |
| 基本参数 | 尺寸 | 5英寸（125mm） | Basic Parameters | Size | 5 inch (125mm) |
| 基本参数 | 纯度 | 半导体级 9N~11N | Basic Parameters | Purity | Semiconductor Grade 9N~11N |
| 基本参数 | 晶体生长工艺 | 直拉法(CZ) / 区熔法(FZ)；可选区熔+直拉复合工艺 | Basic Parameters | Crystal Growth Process | Czochralski (CZ) / Float-Zone (FZ); Combined FZ & CZ optional |
| 基本参数 | 晶向 | <100> / <111>（可定制） | Basic Parameters | Crystal Orientation | <100> / <111> (customizable) |
| 电气性能 | 导电类型 | P型 / N型（可定制） | Electrical Performance | Conductivity Type | P-type / N-type (customizable) |
| 电气性能 | 电阻率 | 全范围可定制，分布均匀，偏差极小 | Electrical Performance | Resistivity | Fully customizable, uniform distribution, minimal deviation |
| 表面与物理特性 | 表面工艺 | 单面抛光(SSP)、双面镜面抛光(DSP)、双磨、研磨+化学腐蚀 | Surface & Physical Properties | Surface Process | Single-side Polishing (SSP), Double-side Mirror Polishing (DSP), Double Grinding, Grinding & Chemical Etching |
| 表面与物理特性 | 厚度 | 常规/薄型/超薄型可选，厚度偏差极小 | Surface & Physical Properties | Thickness | Standard/thin/ultra-thin optional, minimal thickness deviation |
| 表面与物理特性 | 表面质量 | 无氧化层、无划痕、低表面粗糙度、低缺陷密度 | Surface & Physical Properties | Surface Quality | Oxide-free, scratch-free, low surface roughness, low defect density |
| 机械与热性能 | 综合性能 | 机械强度高、抗冲击、热膨胀系数低、耐酸碱腐蚀、抗热冲击 | Mechanical & Thermal Properties | Comprehensive Properties | High mechanical strength, impact resistance, low thermal expansion coefficient, acid & alkali corrosion resistance, thermal shock resistance |
| 核心优势 | 性能特点 | 载流子迁移率高、导电稳定、信号损耗低、批次一致性强、生产良率高 | Key Advantages | Performance Features | High carrier mobility, stable conductivity, low signal loss, strong batch consistency, high production yield |
| 应用领域 | 核心应用 | 新能源汽车电控系统、汽车电子传感器、通信基站器件、医疗电子、物联网设备 | Application Fields | Core Applications | New energy vehicle electronic control systems, automotive electronic sensors, communication base station components, medical electronics, IoT devices |
| 应用领域 | 其他应用 | 小型光伏组件、电力电子器件、集成电路封装、实验室研发、工业控制设备 | Application Fields | Other Applications | Small photovoltaic modules, power electronic devices, integrated circuit packaging, laboratory R&D, industrial control equipment |
| 交付与服务 | 现货状态 | 现货充足 | Delivery & Service | Stock Status | Ample stock available |
| 交付与服务 | 定制服务 | 支持厚度、掺杂类型、表面工艺、包装定制 | Delivery & Service | Customization | Support customization of thickness, doping type, surface process, packaging |
Silicon Wafer Price Single Crystal SiliconWafer Monocrystalline 4 Inch Silicon Wafer
| Product Specification Description | |
| Size | 4inch/5inch/6inch/7inch/12inch |
| Diameter (mm) | 100mm/125mm/150mm/200mm/300mm/ |
| Thickness (μm) | Conventional: 500 – 775μm; Thin wafers: 150 – 200μm; Ultra – thin: 10 – 50μm |
| Orientation | <100> <110>< 111> |
| Growth Method | CN、FN、FGD、MCZ、NTD |
| Surface conditions | grinding (single – side/double – side) chemical etching polishing (single-side/doubl-side) |
| Type | N /P |
| Dopant | N：(P)、(As)、(Sb) P：(B) |
| Resistivity (Ω·cm) | Low resistance / heavy doping: 0.001 – 0.1 Medium resistance: 0.1 – 100 High resistance: 100 – 1000 Ultra – high resistance: > 1000 |
| Purity | Semiconductor – grade: 9N – 11N Photovoltaic – grade: 6N |
Thermstars Advantages:
1: No min quantity to order, Mix orders available
2: Factory price with high purity quality guaranteed
3: Fast safe delivery available by express
4: 24/7 hours for after-sale service.
